GCS offers a total of four (4) power processes (P1, P2, P5 and P6) for Handset wireless, WLAN, Mobile WiMAX and Infrastructure markets. Our P1 and P2 processes are designed to achieve High Ruggedness and Superior Linearity at the same time. The P5 process featuring Unbreakable Ruggedness and High Power Efficiency at the same time was designed for GSM/EDGE power amplifier application. Several customers (including IDMs) have reported excellent VSWR >15:1 with 5V Vcc bias.
| Parameter |
Unit |
P1 |
P2 |
P5 |
P6 |
P7 |
D1 (High fT) |
| Applications |
|
CDMA, WLAN,Linear Gain Block |
CDMA, WLAN, WiMAX, Linear Gain Block |
GSM, Driver Amp |
Hi BV DriverAmp for Base Station, CATV150 |
12V PA, Infrastructure, Base Station PA |
VCO, High-speed Digital and Mixed-signal ICs |
| Current Gain |
|
120 |
70 |
70 |
70 |
70 |
150 |
| BVceo@ KA/cm2 |
V |
12.5 |
13.5 |
18.5 |
23 |
28 |
7.5 |
| BVcbo@ KA/cm2 |
V |
23 |
23 |
33 |
45 |
55 |
17 |
| fT/fmax |
GHz |
45/55 |
40/58 |
32/60 |
30/65 |
20/70 |
60/65 |
| Schottky Diode |
|
Yes |
Yes |
Yes |
Yes |
Yes |
Yes |
| Performance Example |
|
Pout = 28dBm,PAE = 65%G = 20dB,Vcc = 3.5V,Freq = 2.0 GHz,DUT = 1,700 um2 |
Pout = 28dBm,PAE = 65%G = 20dB,Vcc = 3.5V,Freq = 2.0 GHz,DUT = 1,700 um2 |
Pout = 36dBm,PAE = 70%G = 18dB,Vcc = 3.6V,Freq = 0.9 GHz,DUT = 6,900 um2 |
Pout = 33dBm,PAE = 70%G = 21dB,Vcc = 10V,Freq = 2.0 GHz,DUT = 1,700 um2 |
Pout = 30 dBmVcc = 12V DUT = 1,920 um2 |
VCO,fo = 4.990 to 5.154 GHzPo = 9.5Bm,PN = 105dBc/Hz@100KHz offset |
